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Humboldt-Universität zu Berlin - Faculty of Mathematics and Natural Sciences - Elementaranregungen und Transport in Festkörpern

Semicondutor nanostructures and QDs for opto-electronics

Related Publications
Single photon emitter
  • Optical properties of well‐isolated single InP/InGaP quantum dots, physica status solidi (c) 9, 1288 (2012)
  • Single-photon emitters based on epitaxial isolated InP/InGaP quantum dots, Applied Physics Letters 100, 023116 (2012)
  • Controlled growth of InP/InGaP quantum dots on GaAs substrate, Journal of Crystal Growth 323, 228 (2011)
  • Highly polarized self-assembled chains of single layer InP/(In, Ga) P quantum dots, Applied Physics Letters 97, 253113 (2010)
  • Self-assembled chains of single layer InP/(In,Ga) P quantum dots on GaAs (001), Journal of Applied Physics 105 (12), 124308 (2009)
  • Single-dot optical emission from ultralow density well-isolated InP quantum dots, Applied Physics Letters 93, 143111 (2009)
  • Growth of single quantum dots on preprocessed structures: Single photon emitters on a tip, Applied Physics Letters 86, 091911 (2005)
Visible light emitter
  • AlP/GaP distributed Bragg reflectors, Applied Physics Letters 103, 031101 (2013)
  • Evidence of type-I direct recombination in InP/GaP quantum dots via magnetoluminescence, Applied Physics Letters 95, 151105 (2009)
  • Photoluminescence of InP/GaP quantum dots under extreme conditions, High Pressure Research 29, 488 (2009)
  • Colour-tunable light-emitting diodes based on InP/GaP nanostructures, Nanotechnology 17, 3703 (2006)
  • Green emission from InP-GaP quantum-dot light-emitting diodes, Photonics Technology Letters, IEEE 18 (7), 895 (2006)
  • Red light-emitting diodes based on InP/GaP quantum dots, Journal of applied physics 97, 096106 (2005)
  • Electronic structure of self-assembled InP/GaP quantum dots from high-pressure photoluminescence, Physical Review B 67, 075306 (2003)
  • InP quantum dots embedded in GaP: Optical properties and carrier dynamics, Physical Review B 67, 085306 (2003)
  • Optical emission from ultrathin strained type-II InP/GaP quantum wells, Applied Physics Letters 79, 2886 (2001)
  • Radiative recombination from InP quantum dots on (100) GaP, Applied Physics Letters 78, 2163 (2001)
Nanostructures for sensing and imaging
  • Vapour Sensitivity of InP Surface Quantum Dots, Key Engineering Materials 605, 177 (2014)
  • Photoluminescence sensitivity to methanol vapours of surface InP quantum dot: Effect of dot size and coverage, Sensors and Actuators B: Chemical 189, 113 (2013)
  • Surface InP/InGaP quantum dots: Carrier recombination dynamics and their interaction with fluorescent dyes, Journal of Applied Physics 114, 163510 (2013)
  • Chemical Sensitivity of Luminescent Epitaxial Surface InP Quantum Dots, Journal of Sensor Technology 3, 1-5 (2013)
  • Vapour sensing properties of InP quantum dot luminescence, Sensors and Actuators B: Chemical 162, 149 (2012)
  • Biomedical terahertz imaging with a quantum cascade laser, Applied physics letters 88 (15), 153903 (2006)