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Humboldt-Universität zu Berlin - Faculty of Mathematics and Natural Sciences - Optical Systems

Humboldt-Universität zu Berlin | Faculty of Mathematics and Natural Sciences | Department of Physics | Optical Systems | Publications | Terahertz absorption and emission upon the photoionization of acceptors in uniaxially stressed silicon

R.Kh. Zhukavin, K. A Kovalevsky, M.L. Orlov, V.V. Tsyplenkov, H.-W. Hübers, Nils Deßmann, D. V Kozlov, and V.N. Shastin (2016)

Terahertz absorption and emission upon the photoionization of acceptors in uniaxially stressed silicon

Semiconductors, 50(11).

Experimental data on the spontaneous emission and absorption modulation in boron-doped silicon under CO2 laser excitation depending on the uniaxial stress applied along the [001] and [011] crystallographic directions are presented. Room-temperature radiation is used as the probe radiation. Low stress (less than 0.5 kbar) is shown to reduce losses in the terahertz region by 20\%. The main contribution to absorption modulation at zero and low stress is made by A+ centers. Intersubband free hole transitions additionally contribute to terahertz absorption at higher stress. These contributions can be minimized by compensation.

THz, Stimulated emission, Silicon, Laser