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Humboldt-Universität zu Berlin - Faculty of Mathematics and Natural Sciences - Optical Systems

Yu. A Astrov, V. B Shuman, L. M Portsel, A. N Lodygin, S.G. Pavlov, N.V. Abrosimov, V.N. Shastin, and H.-W. Hübers (2017)

Diffusion doping of silicon with magnesium

Physica Status Solidi (A) - Applications and Materials Science(7):1700192.

Doping of silicon with magnesiumis investigated by a sandwich diffusion technique. Temperature dependence of the diffusion coefficient in the dislocation-free silicon in the range of 1000–1200 8C is determined. It obeys the Arrhenius behavior over the range of 600–1200$^\circ$C, when the data obtained earlier for the lower temperatures are taken into consideration. Preliminary results on Mg diffusion in the dislocated crystals are also presented. The dislocation-free Si:Mg samples are investigated with the Hall-effect measurements and the low-temperature Fourier spectroscopy. A decrease in concentration of Mg interstitials (about 15\%) has been observed after 31 months of the samples storage at room temperature, when a commercially available FZ silicon was used as a starting material. The effect of the samples degradation is proposed to be due to a formation of Mg-O complexes. When using a special silicon purified from oxygen and carbon with concentrations below or equal to 1.5 x 10\^ 14 and 5 x 10\^ 14 cm \^ -3, respectively, a decrease in the density of interstitial magnesium has not been noticed during this period. The storage of Si:Mg samples prepared from pure silicon gives rise to the formation of an unknown center, whose ionization energy is between the corresponding values for the interstitial Mg\^ 0 centers and (Mg-O)\^ 0 complexes.

Silicon, Diffusion doping, Infrared spectroscopy