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Humboldt-Universität zu Berlin - Faculty of Mathematics and Natural Sciences - Optical Systems

Humboldt-Universität zu Berlin | Faculty of Mathematics and Natural Sciences | Department of Physics | Optical Systems | Publications | Terahertz lasers based on intracentre transitions of group V donors in uniaxially deformed silicon

K.A. Kovalevsky, N.V. Abrosimov, R.Kh. Zhukavin, S.G. Pavlov, H.-W. Hübers, V.V. Tsyplenkov, and V.N. Shastin (2015)

Terahertz lasers based on intracentre transitions of group V donors in uniaxially deformed silicon

Quantum Electronics, 45(2):113–120.

This paper presents a brief overview of available experimental data on the characteristics of stimulated terahertz emission (4.9 ? 6.4 THz) from optically excited neutral group V donors (phosphorus, antimony, arsenic and bismuth) in crystalline silicon subjected to uniaxial compressive strain along the [100] axis. Strain is shown to have a significant effect on the characteristics in question. Optimal strain depends on the dopant and may reduce the threshold pump intensity and improve lasing efficiency. We discuss possible mechanisms behind this effect and estimate the limiting output emission parameters.

silicon lasers, terahertz