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Humboldt-Universität zu Berlin - Faculty of Mathematics and Natural Sciences - Strukturforschung / Elektronenmikroskopie

Humboldt-Universität zu Berlin | Faculty of Mathematics and Natural Sciences | Department of Physics | Strukturforschung / Elektronenmikroskopie | Publications | Extra half-plane shortening of dislocations as an origin of tensile strain in Si-doped (Al)GaN

J. Weinrich, A. Mogilatenko, F. Brunner, C. T Koch, and M. Weyers (2019)

Extra half-plane shortening of dislocations as an origin of tensile strain in Si-doped (Al)GaN

Journal of Applied Physics, 126(8):085701.